论文部分内容阅读
本文报导了用国产常压ＭＯＣＶＤ系统生长ＧａＩｎＰ材料．研究ＧａＩｎＰ的生长特性，用光致发光、扫描电镜、Ｘ光双晶衍射对材料进行表征．发现Ⅴ／Ⅲ比对ＧａＩｎＰ的光学特性有很大影响．在温度６８０℃，Ⅴ／Ⅲ比为９０的条件下得到Ｇａ（０．５１）Ｉｎ（０．４９）Ｐ外延层的光致发光谱的半高宽为２６ｍｅＶ，这是目前报导的最好结果．Ｇａ（０．５１）Ｉｎ（０．４９）Ｐ的本征载流子浓度为１．１×１０（１５）ｃｍ（－３），晶格失配为４×１０（－４）．
This article reports the growth of GaInP material using a home-grown MOCVD system. The growth characteristics of GaInP were studied. The materials were characterized by photoluminescence, scanning electron microscopy and X-ray double crystal diffraction. It was found that V / III ratio has a great influence on the optical properties of GaInP. The half-width of the photoluminescence spectrum of Ga (0.51) In (0.49) P epitaxial layer obtained at 680 ℃ and V / Ⅲ ratio of 90 was 26meV, which is the best reported result . The intrinsic carrier concentration of Ga (0.51) In (0.49) P is 1.1 × 10 (15) cm (-3) and the lattice mismatch is 4 × 10 (-4).