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运用机械抛光技术在单面敷铜板表面制备了由两根宏观金属铜薄膜电极组成的“T”形结构微米间隙,在“T”形结构微米间隙之间运用电阻负反馈控制电化学过程的方法制备了铜电极纳米间隙,在纳米间隙之间,同样运用电阻负反馈控制电化学过程的方法制备了不同大小接触面积的具有极小磁致伸缩效应特性的Ni80Fe20铁磁金属纳米点接触.测量和比较了不同接触面积的Ni80Fe20纳米点接触的磁电阻,结果表明Ni80Fe20纳米点接触的磁电阻与接触面积之间没有必然关系;在铜电极纳米间隙之间制备的Ni80Fe20纳米点接触可以减少在测量磁电阻时磁致伸缩效应对所测量的磁电阻效应的影响,而它的磁电阻大小与具有明显磁致伸缩效应的Ni纳米点接触的磁电阻大小相近,实验结果一定程度上说明了铁磁金属纳米点接触的弹道磁电阻效应与磁致伸缩效应的关系极小,但由于运用各种方法制备的铁磁金属纳米点接触在本质上都属于两个各向异性微观界面之间的机械点接触行为,所以并不能排除在测量磁电阻时随外加磁场变化而变化的两个点接触界面之间相互作用力引起的电阻变化对所测量的弹道磁电阻效应的影响.
The “T” -shaped microstructures with two macroscopically metallic copper thin film electrodes were prepared on the surface of single-sided copper clad laminates using mechanical polishing technique. Negative feedback control was applied between the “T” shaped microstructures The chemical process of the preparation of the copper electrode nano-gap, between the nano-gap, the same resistance negative feedback control electrochemical process prepared with different sizes of contact area with minimal magnetostrictive effect of Ni80Fe20 ferromagnetic metal nano-dots The results show that there is no necessary relationship between the magnetic resistance and the contact area of Ni80Fe20 nano-point contact. The Ni80Fe20 nano-point contact prepared between the nano-gap of copper electrode can be The effect of magnetostriction on the measured magnetoresistance effect when measuring the magnetoresistance is reduced, and the magnitude of the magnetoresistance thereof is similar to that of the Ni-nano-point contact magnetostrictive magnetostrictive effect. The experimental results to a certain extent The ferromagnetic metal nano-point contact ballistic magnetoresistance effect and the relationship between magnetostrictive effect is minimal, but due to the use of various The preparation of ferromagnetic metal nano-point contact essentially belongs to the mechanical point contact behavior between the two anisotropic micro-interfaces, so it can not be excluded that the two point contact interfaces that change with the applied magnetic field when measuring the magnetoresistance The interaction between the resistance caused by changes in the measured resistance of the ballistics effect.