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对双极晶体管的低温物理模型和低频噪声模型进行了研究，认为低温下硅双极晶体管电流增益下降的主要原因是低温下非理想基极电流的增加。同时指出，低温下硅双极晶体管１／ｆ噪声的增大，是由于低温下电流增益的减小和载流子在体内和表面的复合增加。通过优化设计，做出了一种低温、低频、低噪声硅双极晶体管。测试表明，在室温（３００Ｋ）下，电流增益、低频转折频率、１ｋＨｚ点的噪声电压分别为β≥８００，ｆ＿Ｌ≤３０Ｈｚ，Ｅｎ（１ｋＨｚ）≤１．５ｎＶ／ ；低温（７７Ｋ）下，电流增益、低频转折频率、１ｋＨｚ点的噪声电压分别为β≥３０，ｆ＿Ｌ≤３００Ｈｚ，Ｅｎ（１ｋＨｚ）≤１．２ｎＶ／。
The low-temperature physical model and low-frequency noise model of bipolar transistor are studied. The main reason for the decrease of current gain of silicon bipolar transistor at low temperature is the increase of non-ideal base current at low temperature. At the same time, it is pointed out that the increase of the 1 / f noise of the silicon bipolar transistor at low temperature is due to the decrease of the current gain and the recombination of carriers in the body and the surface at low temperature. By optimizing the design, a low temperature, low frequency, low noise silicon bipolar transistor has been made. The test results show that the current gain, low frequency transition frequency and noise voltage at 1kHz are β≥800, f_L≤30Hz, En (1kHz) ≤1.5nV / at low temperature (77K) at room temperature (300K) , Low-frequency corner frequency, 1kHz noise voltage points were β ≥ 30, f_L ≤ 300Hz, En (1kHz) ≤ 1.2nV /.