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采用磁控溅射法在较低基底温度下(200℃)制备了有序碲纳米线阵列,并利用X射线衍射、扫描电镜和透射电镜对所制备薄膜进行了相、形貌和微观结构分析。结果表明,所制备的纳米线阵列由单晶碲纳米线组成,单根碲纳米线具有针状形貌,并沿[101]晶向生长,平均直径和长度分别为100 nm和1μm。氩气压力和基底温度均对碲纳米线阵列的形成具有重要影响,以平衡碲原子沿[101]晶向和(101)晶面方向的扩散和生长。提出了碲纳米线阵列的生长机制,包括吸附、结合、成核和生长等过程。
An ordered array of tellurium nanowires was prepared by magnetron sputtering at a low substrate temperature (200 ℃). The phase, morphology and microstructure of the films were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy . The results show that the prepared nanowire arrays consist of single crystal tellurium nanowires. The single nanowire telluride nanowire has acicular morphology and grows in the [101] crystal orientation. The mean diameter and length of nanowire nanowires are 100 nm and 1 μm, respectively. Both argon pressure and substrate temperature have an important influence on the formation of tellurium nanowire arrays to balance the diffusion and growth of tellurium atoms in the [101] and (101) planes. The growth mechanism of tellurium nanowire arrays is proposed, including the adsorption, bonding, nucleation and growth processes.