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We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV.The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder.Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration.Small carbon clusters C 2 and C 4 were implanted into Ni/SiO 2 /Si substrates and following post-thermal treatment graphene was obtained.Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2-3 layers of graphene.The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.
We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with an ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV. The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder. Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV / atom without deceleration.Small carbon clusters C 2 and C 4 were implanted into Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2-3 layers of graphene. The Raman data reveals clear effect of nonlinear cluster -surface interaction in ion beam synthesis of two-dimensional nanomaterials.