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在有源寻址有机发光二极管(active matrix organic light emitting diode,AM-OLED)显示基板中,将电学功能层——薄膜晶体管(thin fil mtransistor,TFT)有源层材料p型掺杂金属诱导晶化(metal induced crystallized,MIC)多晶硅(p+-MIC poly-Si)薄膜的版图适当延伸,来充当OLED的阳极,由于它具有低方块电阻、高功函数的电学特性和半反半透、低吸收率的光学特性,与OLED的金属铝阴极形成了微腔器件,成功地形成了显示基板上的多晶硅薄膜的光学功能层.对这一功能层的厚度进行了优化,比较了不同厚度下TFT器件的电学特性和OLED的光学特性.当其厚度为40nm时为最佳厚度,此时,TFT器件场迁移率、阈值电压、亚阈值幅摆、电流开关比和栅压诱导漏极漏电等性能为最佳,且红光微腔式OLED(microcavity-OLED,MOLED)的出光强度增大,光谱窄化,电流效率与功率效率均有所提高.这不仅使器件的性能有所提高,而且大大地简化了AM-OLED基板的制备流程.
In an active matrix organic light emitting diode (AM-OLED) display substrate, a p-type doping metal-induced crystal is formed on an active layer material of an active layer thin film transistor (TFT) The layout of a metal induced crystallized (polycrystalline silicon) (p + -MIC poly-Si) film is properly extended to serve as the anode of an OLED due to its low sheet resistance, high work function electrical characteristics and transflective, low absorption Rate of optical properties, with the metal aluminum cathode OLED formed microcavity device successfully formed on the display of the polysilicon film optical functional layer of the functional layer thickness is optimized to compare the different thickness of the TFT device The electrical properties of the OLED and the optical properties of the OLED when the thickness of 40nm is the best thickness, at this time, TFT field mobility, threshold voltage, subthreshold swing, current switching ratio and gate voltage induced drain leakage performance And the red light microcavity-OLED (MOLED) has higher light intensity, narrower spectrum, higher current efficiency and higher power efficiency, which not only improves the performance of the device but also greatly improves Preparation process of the AM-OLED substrate.