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本文用EHMO方法计算了掺氢和掺氟无定形硅的电子态.结果表明掺氢和掺氟都能消除由悬挂键形成的能隙态,并且掺氟更有效;与已知的实验结果相符.
In this paper, the electronic states of hydrogen-doped and fluorine-doped amorphous silicon have been calculated by EHMO method. The results show that both hydrogen doping and fluorine doping can eliminate the energy gap state formed by dangling bonds and fluorine is more effective. In agreement with the known experimental results .