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利用Cl_2/Ar/BCl_3感应耦合等离子体(ICP)刻蚀技术对GaN与Al_(0.28)Ga_(0.72)N材料之间的非选择性刻蚀和刻蚀以后GaN/Al_(0.28)Ga_(0.72)N异质结的表面物理特性进行了研究。实验表明,优化等离子体中BCl_3的含量(20％～60％),提高ICP功率和直流偏压,降低反应室压强有利于获得非选择性刻蚀.而GaN/Al_(0.28)Ga_(0.72)N异质结刻蚀后的表面形貌与等离子体中的化学组分、反应室压强有密切的关系。在Cl_2/Ar(4:1)中加入20％BCl_3可以在较高的刻蚀速率条件下获得GaN和Al_(0.28)Ga_(0.72)N之间的非选择性刻蚀,并将GaN/Al_(0.28)Ga_(0.720N异质结刻蚀后的表面均方根粗糙度由10.622 nm降低至0.495 nm,优于未刻蚀的GaN/Al_(0.28)Ga_(0.72)N异质结的表面,AES分析表明,在刻蚀过程中从AlGaN的表面有效除去氧对获得非选择性刻蚀和光滑的刻蚀表面是至关重要的。
The effect of GaN / Al 0.28 Ga 0.72 on the non-selective etching and etching of GaN and Al 0.28 Ga 0.72 N was studied by Cl 2 / Ar / BCl 3 ICP-ICP. ) N heterojunction surface physical properties were studied. Experiments show that optimizing the plasma content of BCl_3 (20% -60%), increasing the ICP power and DC bias, and reducing the pressure in the chamber are favorable for obtaining non-selective etching. However, the GaN / Al 0.28 Ga 0.72 N heterojunction etching surface morphology and plasma chemical composition, the reaction chamber pressure is closely related. The addition of 20% BCl_3 to Cl_2 / Ar (4: 1) can result in the non-selective etching of GaN and Al_ (0.28) Ga_ (0.72) N at a higher etching rate, (0.28) Ga_ (0.720N), the surface root mean square roughness decreased from 10.622 nm to 0.495 nm, better than the surface of the unetched GaN / Al_ (0.28) Ga_ (0.72) N heterojunction AES analysis shows that the effective removal of oxygen from the surface of AlGaN during etching is crucial for obtaining non-selective etching and smooth etched surfaces.