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This paper studies the behaviors of power amplifier(PA) driven by a single-carrier continuous wave(CW) signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, called concurrently. Besides that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz/2.65 GHz class F PA, employing a 10 W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 d Bm and 40.8dB m with drain efficiencies(DE) of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dB m in concurrent mode, which follows up with the standard.
This paper studies the behaviors of power amplifier (PA) driven by a single-carrier continuous wave (CW) signal and a two-carrier CW signal both in theory and simulation, and why why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, referred to concurrently. Again that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz / 2.65 GHz class F PA, employing a 10 W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 d Bm and 40.8 dB m with drain efficiencies (DE) of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dB m in concurrent mode, which follows up with the standard.