,Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructur

• 作 者: Shenyan Feng Qiaoxuan Zhang Jie Yang Ming Lei Ruge Quhe
• 机 构: State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beij
• 出 处: 中国物理B（英文版）
• 发表日期: 2017年9期
• 关键词: tunneling field effect transistors negative differential resistance effect on/of

Tunneling field effect transistors (TFETs) based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor,mainly due to potential applications in low power devices.Here,we investigate the TFETs based on two different integration types:in-plane and vertical heterostructures composed of two kinds of layered phosphorous (β-P and δ-P) by ab initio quantum transport simulations.NDR effects have been observed in both in-plane and vertical heterostructures,and the effects become significant with the highest peak-to-valley ratio (PVR) when the intrinsic region length is near zero.Compared with the in-plane TFET based onβ-P and δ-P,better performance with a higher on/off current ratio of ～ 106 and a steeper subthreshold swing (SS) of ～ 23 mV/dec is achieved in the vertical TFET.Such differences in the NDR effects,on/off current ratio and SS are attributed to the distinct interaction nature of the β-P and δ-P layers in the in-plane and vertical heterostructures.