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通过碳热辅助化学气相沉积法,用Au做催化剂在850℃下制备了铟掺杂的氧化锌(In/ZnO)纳米阵列.纳米棒的尺寸均匀,表面光滑,直径约为400nm,长为2—3μm.能量色散谱和X射线光电子能谱分析表明,六棱柱状的纳米阵列中成功地进行了In的掺杂,含量约为0.8%.室温光致发光谱显示掺杂后的紫外发射峰位有红移,峰的半高宽变大,没有观察到绿光发射峰位.拉曼光谱显示出ZnO的峰位有不同程度的偏移,并且有新的峰位出现,这表明In的掺杂有效地取代了部分Zn的晶格.
Indium-doped zinc oxide (In / ZnO) nanostructures were prepared by carbothermal assisted chemical vapor deposition at 850 ℃ with Au as catalyst.The nanorods were uniform in size and smooth in surface with a diameter of about 400 nm and a length of 2 -3μm.The results of energy dispersive spectroscopy and X-ray photoelectron spectroscopy showed that the doping of In with the content of about 0.8% was successfully carried out in the hexagonal columnar nano-array.The room temperature photoluminescence spectra showed that the doped UV emission peak There is a red shift, the FWHM of the peak becomes larger, and no green emission peak is observed.Raman spectroscopy shows that the peak position of ZnO has some degree of shift and new peak position appears, which indicates that In Doping effectively replaces part of the lattice of Zn.