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在p型硅 (10 0 )衬底上 ,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长 .用O2等离子体刻蚀技术将金刚石膜刻蚀成长条形 ,利用四探针法在 0— 5T的磁场范围内测量了样品的磁阻 .实验结果表明 ,p型异质外延金刚石膜可以产生较大的磁阻 .在Fuchs Sondheimer(F S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射 ,通过求解Boltzmann方程 ,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应 ,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系 .讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响 ,初步解释了p型异质外延金刚石膜产生较大磁阻的原因
The growth of p-type heteroepitaxial diamond films was carried out on a p-type silicon (100) substrate by a substrate negative bias microwave plasma CVD method. The diamond films were etched to grow in a strip shape by O2 plasma etching , The reluctance of the sample was measured by the four-probe method in the magnetic field range of 0-5 T. The experimental results show that the p-type heteroepitaxial diamond film can produce larger reluctance.According to Fuchs Sondheimer (FS) thin film theory Considering lattice scattering, impurity scattering and surface scattering, the magnetoresistance effect of p-type heteroepitaxial diamond films was studied by solving the Boltzmann equation and the parallel resistance model. The dependences of reluctance and diamond film thickness, mobility, Density and magnetic field.The effects of surface scattering and valence band deformation on the reluctance of p-type heteroepitaxial diamond films were discussed, and the reasons for the large reluctance of p-type heteroepitaxial diamond films were explained