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半导体外延工艺用的三氯化砷,含有一定量挥发性氯代烷,容易与铬、钼、钨、钒等金属反应生成难溶的碳化物,影响器件的质量。本文根据三氯化砷极易与氢氧化钠作用生成不挥发易溶解的亚砷酸盐和氯代烷在室温下不易与碱发生取代反应的特点,试验了碱溶解分离气相色谱法,测定三氯化砷中挥发性氯代烷碳含量。试验确定,1200℃氧气流中包括四氯化碳在内的所有氯代烷能够完全转化为二氧化碳,经甲烷转化炉转化,生成的甲烷用氢火焰离子化鉴定器检定,可以测
Arsenic trichloride used in semiconductor epitaxy process contains a certain amount of volatile chlorinated alkane and easily reacts with metals such as chromium, molybdenum, tungsten and vanadium to form insoluble carbides and affects the quality of the device. In this paper, based on the fact that arsenic trichloride readily interacts with sodium hydroxide to produce non-volatile and easily soluble arsenite and chlorinated alkanes, it is not easy to react with alkali at room temperature. The alkali dissolution and separation gas chromatography Volatile Chlorinated Alkanes in Arsenic Chloride. It was experimentally determined that all chlorinated alkanes, including carbon tetrachloride, at 1200 ° C in the oxygen stream were completely converted to carbon dioxide and converted to methane by a methanator. The generated methane was examined by a hydrogen flame ionization detector and measured