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日本人在评述红外探测器的发展时,称单元器件为第一代产品,一维阵列和一维混合式红外CCD为第二代产品,二维红外CCD为第三代产品。分类方法和美国人不太一致。日本人指出,目前,单元和一维阵列器件已经达到实用水平,一维混合式红外CCD已经进入试制阶段,二维红外CCD则尚在研究阶段。第三代红外探测器由于采用二维排列,用之制作的装置不仅去掉了扫描镜,而且还可以提高性能。因此,各技术先进国家都在以此作为下一代红外装置用传感器而研究。单片式本征红外探测器材料,正在研究的有HgCdTe和InSb。其结构采用理想的MIS结构。但HgCdTe和InSb材料在结晶性能、绝缘膜-半导体界面性能以及器件制作工艺方面都尚存在一些问题。近年来,上述问题已逐步得到解决,开始做出一些样品。非本征器件主要采用Si:In和Si:Ga材料。肖特基势垒器件已做出64×128元的样品。混合式第三代器件是将HgCdTe、InSb、InAsSb和PbSnTe等光伏阵列和硅信号处理
Japanese comment on the development of infrared detectors, said the first generation of device components, one-dimensional array and one-dimensional hybrid infrared CCD for the second generation of products, two-dimensional infrared CCD for the third generation. The classification method is not very consistent with the Americans. Japanese pointed out that at present, the unit and one-dimensional array devices have reached a practical level, one-dimensional hybrid infrared CCD has entered the trial stage, two-dimensional infrared CCD is still in the research stage. The third generation of infrared detectors due to the use of two-dimensional arrangement, using the device produced not only removed the scanning mirror, but also can improve performance. Therefore, all the technologically advanced countries are using this as a sensor for the next generation of infrared devices. Monolithic Intrinsic Infrared Detector Materials are under study with HgCdTe and InSb. The structure of the ideal MIS structure. However, there are still some problems in the properties of HgCdTe and InSb, such as the crystallinity, the performance of the insulating film and the interface of the semiconductor and the device fabrication process. In recent years, the above problems have been gradually solved and some samples started to be made. Extrinsic devices mainly use Si: In and Si: Ga materials. Schottky barrier devices have made 64 × 128 samples. Hybrid third-generation devices are HgCdTe, InSb, InAsSb and PbSnTe PV arrays and silicon signal processing