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对新型条形辐射探测芯片的吸收膜层进行了理论分析,并且在金刚石材质的探测芯片上采用电镀方法制备了镍磷黑吸收膜.辐射探测芯片的膜层吸收分析表明,芯片吸收膜层的吸收率正比于表面粗糙度.通过对辐射吸收膜层设计与制作工艺的研究,制备出一种用于条形辐射探测芯片的镍磷黑吸收膜,通过测量其表面形貌结构,表明该膜层具有50nm—1.5μm范围的微结构;红外吸收测试表明其吸收率在1.4—8μm波段为0.989以上,从而提高了辐射探测芯片的性能.
The absorbing layer of the novel bar-shaped radiation detecting chip is theoretically analyzed, and the nickel-phosphorus black absorbing film is prepared by electroplating on the diamond detecting chip. The absorption analysis of the film of the radiation detecting chip shows that the absorption layer Absorption rate is proportional to the surface roughness.By the design of the radiation absorption film layer and the production process, prepared a nickel-phosphorus black absorber film for bar radiation detection chip, by measuring the surface morphology of the film, indicating that the film Layer has a microstructure in the range of 50nm-1.5μm; infrared absorption test showed that its absorption rate in the 1.4-8μm band is 0.989 or more, thereby improving the performance of the radiation detection chip.