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本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.
In this paper, the InxGa1-xN thin films for solar cells are deposited by adjusting the substrate temperature (fixing other process parameters) by the MOCVD process. The films are characterized by X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), scanning electron microscopy SEM) and step-spectrometer to analyze the structural properties of InxGa1-xN thin films.When the substrate temperature is low, In InGaN films are favored for In InGaN films deposited at high substrate temperatures.When the substrate temperature is 470 ℃ , The In content of InxGa1-xN thin film deposited on the silicon substrate is high, which is 46.92%. The surface of the film is smooth and dense, the roughness is small, the particles are large, and the particle size is even.