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利用能量为 0 8MeV ,注量为 10 12 /cm2 的低注量电子束辐照VO2 薄膜 ,发现低注量电子辐照显著提高VO2 光学性能的温度响应速度 ,并引起薄膜相变过程中的热滞回线宽度变窄 ,但没有对相变温度点造成明显影响 ;通过对比辐照前后样品 370～ 90 0nm的吸收和透射性能 ,表明辐照后吸光度下降、透射率增加 ,在相变过程中四方相附近出现透射、吸收特性的非稳变化现象 ;利用X射线衍射 (XRD)及拉曼光谱对辐照前后样品进行分析 ,显示低注量电子辐照引起薄膜结构的变化 ,并且引起拉曼振动峰位的改变
The low-dose electron beam irradiated with low-fluence electron beam with energy of 0 8 MeV and fluence of 10 12 / cm2 showed that the low-dose electron irradiation significantly improved the temperature response of VO2 optical properties and caused the heat The hysteresis width is narrower but has no significant effect on the phase transition temperature. By comparing the absorption and transmission properties of the samples before and after irradiation at 370 ~ 90 0 nm, the absorbance decreases and the transmittance increases after the irradiation. During the phase transition The transmissivity and absorption characteristics were unstable near the tetragonal phase. The X-ray diffraction (XRD) and Raman spectra were used to analyze the samples before and after irradiation. The results showed that the low-dose electron irradiation caused the change of the film structure and caused Raman Change in vibration peak position