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本文采用电感耦合等离子体发射光谱对半导体硅原材料及辅助材料中的杂质分析进行了研究。着重研究了提升量对信背比的影响和残留硅对杂质元素的干扰影响，最后采用ＩＣＰ－ＡＥＳ对化学法提纯前的原料（石英砂）、拉制单晶用的辅助材料（硅粉）和拉制单晶过程中采用的石英坩埚中的杂质含量进行了分析。
In this paper, inductively coupled plasma-atomic emission spectrometry (ICP-AES) has been used to study the impurity analysis of semiconductor silicon and its auxiliary materials. The influences of the amount of lift on the signal-to-background ratio and the influence of residual silicon on the impurity elements were emphatically studied. At last, the raw materials (quartz sand) before chemical purification and the auxiliary materials (silicon powder) And the impurity content of the quartz crucible used in the process of drawing single crystal were analyzed.