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本文通过实验测量了GaAs体效应器件的畴雪崩击穿电压及相应的光发射,并进行了器件的烧毁实验,比较了阴极深几何凹槽和一般的Gunn器件之间的区别,从而说明这一模式的存在.
In this paper, we measured the avalanche breakdown voltage of GaAs body-effect devices and the corresponding light emission experimentally, and experimented on the burn-in of the device. The difference between the deep-geometry cathode groove and the general Gunn device is compared to illustrate this The existence of the model.