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根据金属与半导体之间肖特基势垒接触的电流电压关系设计出了一套简易的实验装置，研究了４０ＣＰＱ０４５ 型肖特基势垒二极管芯片小电流下（＜ ２Ａ）的正向电流电压特性。通过外推４０Ａ大电流下芯片结压降的数值，验证了通过小电流正向电流电压特性曲线来外推预测大电流下芯片结压降值的可行性。
According to the current-voltage relationship of the Schottky barrier contact between the metal and the semiconductor, a set of simple experimental device is designed. The forward current of the 40CPQ045 Schottky barrier diode chip under small current (<2A) Voltage characteristics. By extrapolating the value of the chip junction voltage drop under 40A high current, the feasibility of predicting the chip junction-voltage drop under large current is extrapolated through the small current forward current-voltage characteristic curve.