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在硅分子束外延（ＭＢＥ）系统中，利用Ｓｉ和Ｏ２共淀积的方法生长出化学配比理想的ＳｉＯ２，在此基础上生长了Ｓｉ／ＳｉＯ２超晶格并观察到其光致发光（ＰＬ）谱
In silicon molecular beam epitaxy (MBE) system, Si and O2 co-deposition method is used to grow a stoichiometric SiO2, on which Si / SiO2 superlattice is grown and its photoluminescence (PL ) Spectrum