论文部分内容阅读
采用Ge／Pd／GaAs结构和快速热退火在n－GaAs上形成了低阻欧姆接触。利用H次离子质谱（SIMS）技术揭示和讨论了低欧姆接触形成的机理。比较了采用X+和CsX+信号检测的Ge，Pd，Ga和As的深度分布。结果表明采用CSX+可以提供更准确的结果和成分信息。
Low-ohmic contact is formed on n-GaAs using a Ge / Pd / GaAs structure and rapid thermal annealing. H-ion mass spectrometry (SIMS) techniques were used to reveal and discuss the mechanism of low-ohmic contact formation. The depth profiles of Ge, Pd, Ga and As detected by X + and CsX + signals were compared. The results show that using CSX + can provide more accurate results and compositional information.