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In this paper,starting from the theory of the base widening effect,it is demonstrated by asimple calculation that the critical current density of a collector follows T~(-1.3) law.And it isconfirmed by experiment.We obtain from the temperature characteristics of the transistors.Thatthe physical reason for the current gain fall-off at high current levels is the base widening effect.
In this paper, starting from the theory of the base widening effect, it is demonstrated by asimple calculation that the critical current density of a collector follows T ~ (-1.3) law. And it isconfirmed by experiment.We obtain from the temperature characteristics of the transistors.Thatthe physical reason for the current gain fall-off at high current levels is the base widening effect.