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随着分子束外延(MBE)、化学束外延(CBE)以及金属有机物化学汽相沉积(MOCVD)等超薄层生长技术的发展,人们已经成功地生长出原子级厚度和原子级平整的优质异质结构外延材料。以此为基础,研制成功多种新一代半导体光电子和微电子器件,如:量子阱激光器、高电子迁移率晶体管(HEMT)和异质结双极晶晶体管(HBT)等。这些器件不仅大大促进了国防电子工程技术的发展(如雷达、导弹),而且在超高速计算机、卫星通讯和电视接收等方面也有重要应用。超薄层外延材料具有许多新颖的物理特性,已成为凝聚态物理研究前沿领域之一。随着器件尺寸的减小,表面和界面效应越来越突出,并严重影响器件性能。因此,利用现代表面分析技术,从原子尺度上了解超薄层材料生长机理,及器件表面和界面的物理特性,有利于新型材料和器件的发展。三年来,我们在此领域做了许多深入研究,取得了一批具有较高学术价值和应用价值的研究成果。
With the development of ultra-thin layer growth technologies such as molecular beam epitaxy (MBE), chemical beam epitaxy (CBE), and metalorganic chemical vapor deposition (MOCVD), high-quality, atomic- Structure extension material. Based on this, a number of new generations of semiconductor optoelectronic and microelectronic devices have been successfully developed, such as quantum well lasers, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). These devices have not only greatly contributed to the development of national defense electronic engineering technologies (such as radar and missiles), but also have important applications in ultra-high-speed computers, satellite communications and television reception. The ultra-thin layer epitaxial material has many novel physical properties and has become one of the frontier fields in condensed matter physics research. As the device size decreases, surface and interface effects become more pronounced and seriously affect device performance. Therefore, the use of modern surface analysis techniques to understand the growth mechanism of ultra-thin layer material at the atomic scale and the physical properties of the device surface and interface is conducive to the development of new materials and devices. In the past three years, we have done a lot of in-depth studies in this area and have made a number of research achievements with high academic value and application value.