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本文对用蒸发法制备的非晶和多晶碲镉汞(Hg_(1-x)Cd_xTe)薄膜的结构特性及其光学和电学性质进行了研究。在800—2600nm的波长范围内测量了样品的透过率,得到了非晶和多晶状态相应的光学隙分别为1eV以上和0.65eV左右。对非晶样品的退火实验发现,在90—100℃区间退火使非晶样品的结构转变为多晶,同时电阻率突然变小约5个数量级和光学隙由1eV以上突变为0.62eV左右。在20—300K的温度范围内,分别测量了非晶与多晶样品的电阻率,所得结果可用现代非晶半导体理论进行解释。
In this paper, the structural and optical and electrical properties of amorphous and polycrystalline Hg_ (1-x) Cd_xTe films prepared by evaporation were studied. The transmittance of the sample was measured in the wavelength range of 800-2600 nm, and the optical gaps corresponding to the amorphous and polycrystalline states were respectively 1 eV and 0.65 eV. The annealing experiments on amorphous samples showed that annealing at 90-100 ℃ transformed the amorphous structure into polycrystalline while the resistivity suddenly decreased by about 5 orders of magnitude and the optical gap changed from 1eV to 0.62eV. The resistivities of amorphous and polycrystalline samples were measured respectively in the temperature range of 20-300K, and the results can be explained by modern amorphous semiconductor theory.