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Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated.For reverse applied voltages,a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages.After the excitation of repeated high reverse applied voltages,the current-voltage curves show obvious hysteresis behaviors at low temperatures.These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 104.