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TiAlN薄膜是一种有可能作为喷墨打印头中传统的TaN或TaAl发热电阻的替代品。采用TiN和AlN作靶材,在400°C下用射频磁控溅射共沉积方法在Si(100)基底上制备TiAlN薄膜,研究了磁控溅射沉积时等离子体功率密度对TiAlN薄膜电阻率温度系数和抗氧化性能的影响。结果表明,TiAlN薄膜的结晶度、晶粒尺寸和表面粗糙度随着等离子体功率密度的增加而增大,从而导致大晶粒和小晶界。X射线光电子能谱分析得到的Ti、Al和N的键合能表明,TiAlN中氮素化学计量学亏缺使TiAlN薄膜的电阻更大。在最高等离子体功率密度下制备的TiAlN薄膜具有最高的抗氧化性能和最低的电阻率温度系数(765.43×106K1)。
The TiAlN film is a potential alternative to the traditional TaN or TaAl heating resistors in inkjet printheads. The TiAlN thin films were deposited on Si (100) substrate by RF magnetron sputtering at 400 ° C using TiN and AlN as targets. The effects of plasma power density on the resistivity of TiAlN thin films during magnetron sputtering deposition were investigated. Temperature coefficient and oxidation resistance. The results show that the crystallinity, grain size and surface roughness of TiAlN films increase with the increase of plasma power density, resulting in large grains and small grain boundaries. The bond energies of Ti, Al and N obtained by X-ray photoelectron spectroscopy analysis show that the stoichiometry of nitrogen in TiAlN makes the electrical resistance of TiAlN thin films larger. TiAlN films prepared at the highest plasma power density have the highest oxidation resistance and the lowest temperature coefficient of resistivity (765.43 × 106K1).