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铝-n型硅肖特基二极管在热处理后势垒高度φ_B要升高。本文实验结果从几个方面表明这是由于热处理形成表面p 型层引起的。本文介绍p型沟道法等验证界面有p型层存在的实验结果,并通过一维模型的理论计算和XPS实验结果估计p型层的浓度在10~(18)/厘米~3附近.用等离子腐蚀实验和p沟道击穿电压的理论分析估计p型层的厚度,结果表明,对纯铝生成的p型层约为100～200埃,铝硅生成的p型层约150～300埃。此外,还发现采用溅射工艺不经热处理即可获得良好的肖特基接触,因而可避免界面p型层的产生。
Aluminum-n-type Schottky diode barrier height after heat treatment φ_B to be elevated. The experimental results in this paper show from several aspects that this is caused by the formation of the surface p-type layer by heat treatment. This paper introduces the experimental results of the p-type layer on p-channel and other verification interfaces, and estimates the concentration of p-type layer around 10 ~ (18) / cm ~ 3 by the theoretical calculation and XPS experimental results of one-dimensional model Plasma etching and p-channel breakdown voltage theoretical analysis to estimate the thickness of the p-type layer, the results show that the p-type layer of aluminum produced about 100-200 angstroms, aluminum-silicon p-type layer of about 150 to 300 angstroms . In addition, it has also been found that a good Schottky contact can be obtained without a heat treatment using a sputtering process, thereby avoiding the creation of an interfacial p-type layer.