Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposit

• 作 者: 瞿全炎 邱万奇 曾德长 刘仲武 代明江 周克崧
• 机 构: School of Materials Science and Engineering, South China University of Technology,Guangdong Institut
• 出 处: Transactions of Nonferrous Metals Society of China
• 发表日期: 2009年01期
• 关键词: diamond purity deflection crystalline conduction chamber phonon preferred expose

The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

The uniform diamond films were characterized by scanning electronic microcopy (SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal The results of the main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W / (K · cm), can be obtained at a CH4 concentration of 1.5% (volume fraction ) and the substrate temperatures of 880-920 ° C due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.