Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe_2 thin

• 作 者: 方玲 张弓 庄大明 赵明 吴敏生
• 机 构: Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China,Department of Mecha
• 出 处: Journal of Central South University of Technology(English Ed
• 发表日期: 2005年01期
• 关键词: segregation sputtering magnetron deviation photograph segregated diffractometry

Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe_2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe_2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe_2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu_(11)In_9) phase with In-rich solid solution. Stoichiometric CuInSe_2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe_2 thin film shows P-type conductivity and its resistivity reaches 1.2×10~3Ω·cm.

Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe_2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe_2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively observe the surface morphologies and determine the compositions of both Cu-In precursors and CuZnSe_2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu_ (11) In_9) phase with In-rich solid solution. homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe_2 thin film shows P-type conductivity and its resistivity reaches 1.2 × 10 -3 ΩΩ · cm.