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The structural and electronic properties of undoped and Ag-doped unpassivated wurtzite GaAs nanowires (NWs),as well as their stability,are investigated within the first-principles frame.The calculated formation energies show that the single Ag energetically prefers to substitute the surface Ga (Ef =-0.529 eV) under As-rich conditions,and creates a much shallower (0.19 e V above the Fermi) acceptor level,which is of typical p-type character.With the increase in the Ag concentration,the p-type behavior gradually weakens and the n-type character arises.Thus,one can expect to synthesize Ag-doped GaAs NWs for p-type or n-type applications by controlling their Ag concentration and microarrangement.