High-peak-power passively Q-switched 1.3 μm Nd:YAG/V~(3+):YAG laser pumped by a pulsed laser diode

• 作 者: 王兆伟 张百涛 宁建 张晓彤 苏现翠 赵如薇
• 机 构: State Key Laboratory of Crystal Materials, Institute of Crystal Materials,Shandong University,
• 出 处: Chinese Optics Letters
• 发表日期: 2015年02期
• 关键词: pumped switched m Nd repetition pulsed shortest absorbed operated coated mirror

We demonstrate a high-pulse-energy, short-pulse-width passively Q-switched(PQS) Nd:YAG∕V3t:YAG laser at 1.3 μm, which is end-pumped by a pulsed laser diode. During the PQS regime, a maximum total output pulse energy of 3.3 m J is obtained under an absorbed pump pulse energy of 21.9 m J. Up to 400 μJ single-pulse energy is realized with the shortest pulse width of 6.16 ns and a pulse repetition frequency of 34.1 k Hz,corresponding to a peak power of 64.9 k W. The high-energy laser pulse is operated in the dual wavelengths of 1319 and 1338 nm, which is a potential laser source for THz generation.

During the PQS regime, a is short-pulse-width passively Q-switched (PQS) Nd: YAG / V3t: YAG laser at 1.3 μm, which is end-pumped by a pulsed laser diode Maximum total output pulse energy of 3.3 mJ is obtained under an absorbed pump pulse energy of 21.9 m J. Up to 400 μJ single-pulse energy is realized with the shortest pulse width of 6.16 ns and a pulse repetition frequency of 34.1 k Hz, corresponding to a peak power of 64.9 kW. The high-energy laser pulse is operated in the first two wavelengths of 1319 and 1338 nm, which is a potential laser source for THz generation.