论文部分内容阅读
中国科学院半导体研究所半导体超晶格国家重点实验室研究员赵建华团队与合作者北京大学教授徐洪起等在《纳米快报》(Nano Letters)上发表了高质量立式InSb二维单晶纳米片的研究成果。在Ⅲ-Ⅴ族半导体中,InSb化合物具有最窄禁带宽度、最高电子迁移率、最小有效质量和最大g因子,是制备高速低功耗电子器件、红外光电子器件及进行自旋电子学研究与拓扑量子计算等前沿物
Chinese Academy of Sciences Institute of Semiconductors semiconductor superlattice State Key Laboratory researcher Zhao Jianhua team and collaborators Peking University professor Xu Hongqi in the “Nano Letters” published high-quality vertical InSb two-dimensional single crystal nanosheets research results . In III-V semiconductors, InSb compounds have the narrowest forbidden band width, the highest electron mobility, the minimum effective mass and the maximum g-factor. It is a promising method to fabricate high speed and low power electronic devices, infrared optoelectronic devices and spintronics Topological quantum computation frontier