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电子陷阱掺杂可明显改善晶体材料中光电子衰减特性,最终改善其物理性能。利用微波吸收介电谱检测技术,对30%Ag位置处掺杂不同浓度K4[Ru(CN)6]和(NH4)2IrCl6的立方体AgCl微晶中自由和浅束缚光电子衰减时间(FDT,SDT)分辨谱进行了检测。结果表明,对于掺杂K4[Ru(CN)6]的样品,随掺杂浓度增加,FDT逐渐从157ns延长至520ns;且不同浓度掺杂时的FDT均大于未掺杂时的FDT(150ns)。而对于掺杂(NH4)2IrCl6的情况,随掺杂浓度增加,FDT逐渐从126ns减小至45ns;且不同浓度掺杂时的FDT均小于未掺杂时的FDT(150ns)。分析得知,K4[Ru(CN)6]掺杂在AgCl中引入了能暂时俘获光电子的浅电子陷阱(SETs);而(NH4)2IrCl6掺杂在AgCl中引入了能长时间俘获光电子的深电子陷阱(DETs)。同时对光电子衰减动力学过程分析得知,陷阱的类型对光电子衰减寿命分区影响不同,SETs的引入使光电子衰减寿命曲线明显呈现两个指数衰减区,而DETs的引入使光电子衰减寿命曲线只呈现一个指数衰减区。
Electron trap doping can significantly improve the photoelectron decay properties in crystalline materials and ultimately improve their physical properties. The free and shallow bound photoelectron decay time (FDT, SDT) in cubic AgCl crystallites doped with different concentrations of K4 [Ru (CN) 6] and (NH4) 2IrCl6 at 30% Ag were measured by microwave absorption dielectric spectroscopy Discriminant spectra were tested. The results show that the FDT gradually increases from 157ns to 520ns with the increase of doping concentration for samples doped with K4 [Ru (CN) 6], and the FDT of doping with different concentrations is larger than that of FDT without doping (150ns) . In the case of doped (NH4) 2IrCl6, the FDT decreases from 126ns to 45ns with the increase of the doping concentration, and the FDT at different concentrations is smaller than that of the undoped FDT (150ns). The results show that K4 [Ru (CN) 6] doped shallow electron traps (SETs) which can temporarily trap photoelectrons in AgCl, while (NH4) 2IrCl6 doping in AgCl can introduce deep-trapped photoelectrons Electronic Traps (DETs). At the same time, the dynamics analysis of photoelectron decay dynamics shows that the types of traps have different effects on the photoelectron decay lifetime partitioning. The introduction of SETs makes the photoelectron decay lifetime curve obviously show two exponential decay zones. The introduction of DETs makes the photoelectron decay lifetime curve only one Exponential decay zone.