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采用常规扩散方法形成PN结的普通硅光电二极管,结深为几个微米,光谱响应灵敏度的峰值约在8500埃左右,短波响应很低,当4500埃时,几乎无响应。其原因主要是两方面,一是硅材料质量和工艺水平,即硅单晶或外延层复合中心较多;或扩散杂质的表面浓度太高和晶格缺陷多,工艺过程杂质
Ordinary silicon photodiodes that use conventional diffusion methods to form PN junctions have junction depths of a few microns and peak spectral response sensitivities of about 8500 angstroms with very short shortwave responses and almost no response at 4500 angstroms. The reasons are mainly two aspects, one is the quality and technological level of silicon material, that is, silicon single crystal or epitaxial layer compound center is more; or the diffusion of impurities in the surface concentration is too high and lattice defects, process impurities