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利用金属蒸发真空多弧离子源(MEVVA源)注入机将Ti+离子注入到高纯石英玻璃衬底中,离子注入的加速电压为20 k V,注入剂量为1.5×1017和3×1017ions/cm2,将注入样品在氧气气氛下进行热退火处理,制备了TiO2纳米薄膜。采用光吸收谱、拉曼光谱、X射线光电子能谱、扫描电子显微镜和透射电子显微镜对注入样品进行了测试和表征,分析了TiO2薄膜的形成机理。在热退火过程中衬底中离子注入的Ti原子向外扩散到衬底表面被氧化形成了TiO2。TiO2的形成、晶粒尺寸和晶体结构依赖于热退火温度,而形成TiO2薄膜的厚度主要受离子注入剂量和热退火时间的影响。实验结果表明,该方法制备的TiO2纳米薄膜将有望应用于制备具有光催化、自清洁等特殊性能的自清洁玻璃。
Ti + ions were implanted into high purity silica glass substrate by using a metal evaporation vacuum multi-arc ion source (MEVVA source) implanter. The acceleration voltage of ion implantation was 20 kV and the implantation dose was 1.5 × 10 17 and 3 × 10 17 ions / cm 2. The samples were annealed in oxygen atmosphere to prepare TiO2 nanostructured films. The samples were tested and characterized by optical absorption spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. The formation mechanism of TiO2 thin films was analyzed. Ti atoms diffused into the substrate during thermal annealing diffused to the substrate surface to be oxidized to form TiO2. The formation of TiO2, the grain size and the crystal structure depend on the thermal annealing temperature, and the thickness of the formed TiO2 film is mainly affected by the ion implantation dose and thermal annealing time. The experimental results show that the TiO2 nanofilms prepared by this method are expected to be used in the preparation of self-cleaning glass with special properties such as photocatalysis and self-cleaning.