Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structu

• 作 者: 王信 陆妩 马武英 郭旗 王志宽 何承发 刘默寒 李小龙 贾金成
• 机 构: Key Laboratory of Functional Materials and Devices for Special Environments,Chinese Academy of Scien
• 出 处: Chinese Physics Letters
• 发表日期: 2016年08期
• 关键词: trapped irradiation Controlled gated exposed specially transistor fluorine expos

The radiation damage responses of Buorinated and non-Buorinated lateral PNP transistors are studied with specially designed gated-controUed lateral PNP transistors that allow for the extraction of the oxide trapped charge(Not)and interface trap(Nt)densities.All the samples are exposed in the Co-60γray with the dose rate of 0.5 Gy(Si)/s.After the irradiation,the buildup of N_(ot)and N_(it)of the samples with total dose is investigated by the gate sweep test technique.The results show that the radiation resistance of Buorinated lateral PNP transistors is signiBcantly enhanced compared with the non-Buorinated ones.

The radiation damage responses of BuNoated and non-Buorinated lateral PNP transistors are studied with specially designed gated-controUed lateral PNP transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nt) densities. All the samples are exposed in the Co-60γray with the dose rate of 0.5 Gy (Si) /. After the irradiation, the buildup of N_ (ot) and N_ (it) of the samples with total dose is investigated by the gate sweep test technique. results show that the radiation resistance of Buorinated lateral PNP transistors is signiBcantly enhanced compared with the non-Buorinated ones.