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给出了一种新的预估互补金属氧化物半导体器件(CMOS器件)空间低剂量率辐射效应模型,相对线性响应预估模型,该模型在预估CMOS器件低剂量率辐射效应方面更接近实际试验结果,且不同剂量率辐射试验结果证实了所建模型的正确性.最后利用新建模型对处于空间低剂量率环境下CMOS器件的敏感参数进行了预估.
A new model of predicting the radiation effects of low-dose-rate radiation in CMOS devices (CMOS devices) is proposed. The relative linear response prediction model is closer to actual in estimating the radiation effects of CMOS devices at low dose rates The experimental results and the results of different dose rate radiation tests confirm the correctness of the model.Finally, the sensitivity of the CMOS device in the low-dose-space environment is estimated by the new model.