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目前,国内生产100W以上的硅低频功率管,一般都采用三重扩散工艺,由于其背衬的制作,需经近百小时的高温扩散,不仅生产周期长,材科的成品率较低,而且长时间热扩散所引起的二次缺陷,还会对大电流特性等带来不利影响。根据对双扩散法生产100W硅低频功率管现行工艺的分忻,我们认为,只要在设计和工艺上作适当的选择和调整,用双扩散工艺制造300W硅低频功率管是可行的,仍可解决大电流高耐压和低饱和压降的矛盾,又可以缩短高温扩散时间,我们设计了两种图形进行了试制,现将结果和存在的问题介绍如下。
At present, the domestic production of more than 100W silicon low-frequency power tube, are generally used triple diffusion process, due to its backing production, subject to nearly a hundred hours of high temperature diffusion, not only the production cycle is long, the yield of materials is lower, and long The secondary defects caused by the time thermal diffusion can also adversely affect the high current characteristics. According to the analysis of current technology of double-diffused 100W silicon low-frequency power tube, we think that it is feasible to manufacture 300W silicon low-frequency power tube by double diffusion process, so long as proper design and process are selected and adjusted, it can still be solved High current high voltage and low saturation voltage drop of contradictions, but also can shorten the high temperature diffusion time, we have designed two graphics were trial, now the results and problems are as follows.