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＜１００＞Ｓｉ衬底上淀积厚度为７００ｎｍ的铝薄膜（铝中含０．８５ｗｔ．％的Ｃｕ）．以剂量为４．３×１０１７－１．５×１０~（１８）ｃｍ~（－２）４００ｋｅｖＮ＿２~＋或３５０ｋｅＶＮ~＋的注入到铝薄膜中或铝和硅的界面。用扩展电阻测试．背散射和沟道技术以及红外光谱分析研究氮化铝的形成和Ｃｕ杂质在铝薄膜中的深度分布变化．扩展电阻与背出射分析证实了符合ＡｌＮ化学计量比的绝缘层的形成．红外分析说明此绝缘层具有ＡｌＮ的特征吸收峰（６５０ｃｍ－１）．Ｎ＋注入引起的点缺陷导致了Ｃｕ杂质向氮化铝中的偏析．
An aluminum thin film (0.85 wt.% Cu in aluminum) was deposited on the <100> Si substrate to a thickness of 700 nm. At an implantation dose of 4.3 × 10 17 -1.5 × 10 18 cm -2, 400 keV N 2 ~ + or 350 keV N ~ + was implanted into the aluminum film or at the interface between aluminum and silicon. With extended resistance test. Backscattering and channeling techniques and infrared spectroscopy to study the formation of aluminum nitride and the change of depth profile of Cu impurity in aluminum thin films. Expanded resistance and back-shot analysis confirmed the formation of AlN stoichiometric insulation. Infrared analysis shows that the insulating layer has a characteristic absorption peak of AlN (650 cm -1). Point defects caused by N + implantation lead to segregation of Cu impurities into aluminum nitride.