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TriQuint Semiconductor公司的研究人员宣布制造出世界上最大功率的Si衬底Al-GaN/GaN HEMT。该公司理查森研究室的D.Dumka及其同事报导其制造的上述器件10GHz下的连
TriQuint Semiconductor researchers announced the creation of the world’s largest power Si substrate Al-GaN / GaN HEMT. D. Dumka and his colleagues at the company’s Richardson Research Laboratory reported that the devices it makes at 10 GHz