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使用二次离子质谱(SIMS)和电学特性参数测量深入研究了在40 nm低功耗工艺中,激光脉冲退火(LSA)对超浅结(USJ)以及其对pMOS器件有源区和多晶硅栅方块电阻、阈值电压卷曲曲线和本征特性曲线的影响。从SIMS结果可以看出,LSA由于其作用时间非常短(微秒量级),与锗的预非晶化离子注入结合起来,在完成注入离子激活的同时,有效避免不必要的结扩散,从而控制结深,形成超浅结。从进一步的电学特性测量上发现LSA对器件的薄层电阻、结电容和结漏电流也有非常大的影响:LSA和尖峰退火(SPK)共同退火的方式较单独的SPK退火方式,多晶硅方块电阻降低10%,而结电容和结漏电流也相应分别降低3%和50%,此外,相比于单独的SPK退火,LSA和SPK共同退火的方式也具有更好的阈值电压卷曲曲线和本征特性曲线特性。
Using SIMS and electrical characterization measurements, the effects of laser pulse anneal (LSA) on the ultra-shallow junction (USJ) and its effect on the active region of the pMOS device and the polysilicon gate square Resistance, threshold voltage curl curve and the intrinsic characteristic curve. From the results of SIMS, LSA can be combined with the pre-amorphization ion implantation of germanium due to its very short acting time (on the order of microseconds) to effectively prevent unnecessary junction diffusion while completing ion implantation Control junction deep, the formation of ultra-shallow knot. LSA has a great influence on the sheet resistance, junction capacitance and junction leakage of the device from the further measurement of electrical characteristics: the annealing of LSA and spike annealing is more than that of the single SPK annealing and the resistance of polysilicon sheet is lower 10%, while the junction capacitance and junction leakage are also reduced by 3% and 50%, respectively. In addition, the co-anneal mode of LSA and SPK also has better threshold voltage curl curve and intrinsic characteristics than the single SPK anneal Curve characteristics.