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利用化学气相沉积法(chemical vapor deposition,CVD),以Zn4(OH)2(O2CCH3)6.2H2O为固相源、ZnNO3为掺杂源制备出p型ZnO:N薄膜,采用XRD,霍耳效应和PL谱对薄膜进行分析,研究了衬底温度对膜结构、电学性质和光致发光特性的影响.结果表明,生长温度较低时,薄膜呈p型导电特性且电阻率随衬底温度的升高而下降,衬底温度为400℃时,载流子浓度达到+5.127×1017cm3?,电阻率为0.04706?.cm,迁移率为259cm2/(V.s),并且一个月后的测试表明薄膜仍呈p型导电特性.当衬底温度过高时薄膜从p型导电转为n型.
The p-type ZnO: N thin films were prepared by chemical vapor deposition (CVD) using Zn4 (OH) 2 (O2CCH3) 6.2H2O as solid phase source and ZnNO3 as doping source. PL spectra were used to analyze the effect of substrate temperature on the structure, electrical properties and photoluminescence properties of the films. The results show that the films exhibit p-type conductivity at lower growth temperature and the resistivity increases with increasing substrate temperature While the carrier temperature is 400 ℃, the carrier concentration reaches + 5.127 × 1017cm3 ?, the resistivity is 0.04706? Cm and the mobility is 259cm2 / (Vs), and the test after one month shows that the film still has a p Type conductivity. When the substrate temperature is too high, the film changes from p-type conductivity to n-type.