Scaling CMOS devices through alternative structures

• 作 者: 胡正明
• 出 处: Science in China(Series F:Information Sciences)
• 发表日期: 2001年01期
• 关键词: scaling tunneling wisdom scaled today holds challenges finding overcome limitati

The conventional wisdom holds that CMOS devices cannot be scaled much further from where they are today because of several device physics limitations such as the large tunneling current in very thin gate dielectrics. It is shown that alternative device structures can allow CMOS transistors to scale by another 20 times. That is as large a factor of scaling as what the semiconductor industry accomplished in the past 25 years. There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.

The conventional wisdom holds that CMOS devices can not be scaled much further from where where are are due to several device physics limitations such as the large tunneling current in very thin gate dielectrics. That is as large a factor of scaling as what the large semiconductor industry accomplished in the past 25 years. There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.