论文部分内容阅读
用俄歇子能谱（AES）研究了热丝法生长金刚石膜中未经划痕处理的单晶硅衬底在不同沉积时间下的表面结构及Si，C，O元素浓度的深度分布。结果表明：在沉积过程中，随沉积时间增加时，基材表面C浓度增加，O浓度下降，但SiC过渡层的生长缓慢。700℃沉积4h时仍无结构完整的SiC层生成，这是表面SiO2层阻碍了SiC的形成。分析了不经划痕处理的基材形核率低的原因。用高分辨电镜（HREM）观察了生长良好的金刚石膜的膜—基界面，发现没有SiO2层存在。
The surface structure and the depth distribution of Si, C, O concentration of un-scratched single crystal silicon substrate grown by hot filament method at different deposition time were studied by Auger electron spectroscopy (AES). The results show that when the deposition time increases, the concentration of C on the surface of the substrate increases and the concentration of O decreases, but the growth of the SiC transition layer is slow. At 700 ℃ for 4h, there is still no SiC layer formed, which is an obstacle to the formation of SiC. The reason why the nucleation rate of the non-scratched substrate is low is analyzed. The film-base interface of a well-grown diamond film was observed by high resolution electron microscopy (HREM) and no SiO2 layer was found.