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Polycrystalline silicon(poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition(ECR-PECVD).The effects of the substrate temperature on deposition rate,crystallinity,grain size and the configuration of H existing in poly-Si film were investigated.The results show that,comparing with H2 dilution,Ar dilution could significantly decrease the concentration of H on the growing surface.When the substrate temperature increased,the deposition rate increased and the concentration of H decreased monotonously,but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends.It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate.At substrate temperature of 200℃,the deposited film exhibits the maximum poly-Si volume fraction of 79%.Based on these results,higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.
Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H2 dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased. monotonously, but the crystallinity and the grain size of poly-Si films ended sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200 ° C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is sugges ted to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.