论文部分内容阅读
用Si—C复合靶(单晶硅片和高纯石墨片拼成)高频溅射形成的Si_xC_(1-x)混合非晶膜是一种宽温区温度敏感材料。这种膜具有明显的退火特性.在不同温度下退火处理,其阻值相对变化随退火温度有一极性转变点。在低于极性转变点温度下退火,阻值升高,高于此温度退火,阻值降低。该温度为薄膜淀积的最佳温度。退火时非晶膜的材料常数(B值)随退火温度的升高而下降;B值的温度特性符合B=nT+m的关系.n值随退火温度升高而降低。根据n值的大小可以解释混合非晶膜退火过程中其结构由非晶向多晶转化的机理.
The Si_xC_ (1-x) mixed amorphous film formed by high-frequency sputtering of Si-C composite target (monocrystalline silicon wafer and high purity graphite wafer) is a wide temperature zone temperature-sensitive material. This film has obvious annealing characteristics.At different temperatures annealing treatment, the relative change in resistance with the annealing temperature has a polarity transition point. Annealing below the temperature of the transition point, the resistance increases, higher than this temperature annealing, resistance decreased. This temperature is the optimum temperature for film deposition. The material constant (B value) of the amorphous film decreases with the increase of annealing temperature during annealing. The temperature dependence of B value is in accordance with B = nT + m, and the value of n decreases with the increase of annealing temperature. According to the size of n value can explain the mixed amorphous film annealing its structure from amorphous to polycrystalline mechanism.