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在 410～ 40 4nm的紫激光作用下 ,利用平行板电极装置研究了Si(CH3) 4的多光子解离 (MPD)及Si原子的双光子共振三光子电离。观察到了Si(CH3) 4分子经MPD产生的、处于 33PJ″(J″ =0 ,1,2 )态的硅原子 ,依据 43PJ′← 33PJ″(J′、J″=0 ,1,2 )跃迁谱线的强度 ,得到了Si(CH3) 4经MPD产生的、处于 33PJ″(J″=0 ,1,2 )态的硅原子的密度分布值 ,并进行了理论计算 ,依据双光子跃迁的选择定则及其附加定则 ,对 410～ 40 4nm内的跃迁谱峰作了归属。根据这些结果 ,讨论了Si(CH3) 4的MPI机理 ,得到了在这一波段内 ,于本文的实验条件下 ,Si(CH3) 4的MPI机理主要为B类光化学行为的结论。
The multi-photon dissociation (MPD) of Si (CH3) 4 and the two-photon resonance three-photon ionization of Si atom were studied by the parallel plate electrode device under the violet laser of 410-440 nm. It is observed that the silicon atoms of Si (CH3) 4 molecules generated by MPD in the 33PJ “(J” = 0, 1, 2) state are determined according to 43PJ ’← 33PJ “(J’, J” = 0,1,2) The intensity distribution of Si (CH3) 4 by MPD at 33PJ "(J = 0, 1, 2) state was obtained and calculated theoretically. According to the two-photon transition The selection rule and its additional rules, the 410 ~ 40 4nm transition peaks within the attribution. Based on these results, the MPI mechanism of Si (CH3) 4 is discussed and the MPI mechanism of Si (CH3) 4 is mainly concluded as B-type photochemical behavior in this band in this paper.