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采用真空共蒸发法制备了CdSyTe1-y(0≤y≤1)多晶薄膜,并用X射线衍射谱(XRD)、能量色散谱(EDS)研究了CdSyTe1-y多晶薄膜的结构、组分。实验结果表明:石英振荡法监控的组分与EDS谱结果较为一致;当y<0·3时,CdSyTe1-y多晶薄膜为立方结构,当y≥0·3时,CdSyTe1-y多晶薄膜为六方结构。采用XRD线形分析法可计算出CdSyTe1-y多晶薄膜晶粒大小约20～50nm。最后,用紫外-可见-近红外谱(UV-Vis-NIR),测得300～2500nmCdSyTe1-y多晶薄膜的透过率曲线,并结合一阶Sellmeier模型的折射率色散关系,表征了CdSyTe1-y多晶薄膜的光学性质,获得了CdS0·22Te0·78多晶薄膜的光学厚度d～535nm,光能隙Eg～1·41eV,以及吸收系数α(λ)、折射率n(λ)等光学量。结果也表明,采用真空共蒸发法可以制备需要组分的CdSyTe1-y多晶薄膜,对CdSyTe1-y多晶薄膜光学性质的表征方法可推广到其他的半导体薄膜材料。
CdSyTe1-y (0≤y≤1) polycrystalline thin films were prepared by vacuum co-evaporation method. The structure and composition of CdSyTe1-y polycrystalline thin films were investigated by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) The experimental results show that the components monitored by the quartz oscillation method are in good agreement with the EDS spectra. When y <0.3, the CdSyTe1-y polycrystalline thin films have a cubic structure. When y≥0.3, the CdSyTe1-y polycrystalline thin films For the six-party structure. The grain size of CdSyTe1-y polycrystalline thin films can be calculated by XRD linear analysis to be about 20 ~ 50nm. Finally, the transmittance curves of 300 ~ 2500nm CdSyTe1-y polycrystalline films were measured by UV-Vis-NIR spectroscopy. Combined with the refractive index dispersion of the first-order Sellmeier model, the CdSyTe1- y optical properties of CdS0 · 22Te0 · 78 polycrystalline thin films were obtained. The optical thickness d ~ 535nm, the optical energy gap Eg ~ 1 · 41eV and the optical properties of the absorption coefficient α (λ), refractive index n the amount. The results also show that CdSyTe1-y polycrystalline thin films can be prepared by vacuum co-evaporation and the optical properties of CdSyTe1-y polycrystalline thin films can be extended to other semiconductor thin films.