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近来,溅射法已用于各种单晶元素、化合物、合金和超晶格半导体的生长。对于Ⅲ-Ⅴ族化合物半导体来说,单晶的生长大多与诸如InSb、GaSb、In_(1-x)Ga_xSb、InSb_(1-x)Bi_x和InSb/GaSb超晶格的Sb基化合物和合金有关。从非掺杂的GaAs源中,通过溅射沉积法在(100)掺Cr的GaAs衬底上生长GaAs外延膜。非故意掺杂的样品为n型高阻(10~5～10~9Ω·cm),室温迁移率高达5000cm~2/v·
Recently, the sputtering method has been used for the growth of various single crystal elements, compounds, alloys, and superlattice semiconductors. For group III-V compound semiconductors, the growth of single crystals is mostly related to Sb-based compounds and alloys such as InSb, GaSb, In_ (1-x) Ga_xSb, InSb_ (1-x) Bi_x and InSb / GaSb superlattices . From the non-doped GaAs source, a GaAs epitaxial film was grown on a (100) Cr-doped GaAs substrate by a sputter deposition method. The unintentionally doped samples are n-type high resistance (10 ~ 5 ~ 10 ~ 9Ω · cm) and the room temperature mobility is up to 5000cm ~ 2 / v